Modeling substrate diodes under ultra high ESD injection conditions

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn 2001-January, Issue , 2001, Pages 70-80

  Boselli, Gianluca ^a,b   Ramaswamy, Sridhar ^b   Amerasekera, Ajith ^b   Mouthaan, Ton ^a   Kuper, Fred ^a,c  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b TEXAS INSTRUMENTS   (United States)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Bipolar transistors; Circuits; CMOS technology; Conductivity; Electrons; Electrostatic discharge; Instruments; Protection; Semiconductor diodes; Substrates

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; ELECTRONS; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; INSTRUMENTS; NETWORKS (CIRCUITS); SUBSTRATES;

CMOS TECHNOLOGY; INJECTION CONDITIONS; INJECTION LEVELS; MODEL SUBSTRATES; PROTECTION; SELF-HEATING EFFECT; ULTRA-HIGH;

SEMICONDUCTOR DIODES;

EID: 84948953679     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

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