Mixed valence compounds for integrated optics

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 2002, Pages 203-206

  Bulinski, Mircea ^a   Kuncser, Victor ^b   Plapcianu, Carmen ^b   Cristea, Dana ^c   Elena, Manea ^c   Paula, Obreja ^c   Krautwald, Stefan ^d   Franke, Hilmar ^d   Wagner, F E ^e   Filoti, G ^b  

^a UNIVERSITY OF BUCHAREST   (Romania)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^c NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^d UNIVERSITY OF DUISBURG ESSEN   (Germany)

^e TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT ABSORPTION; MOSSBAUER SPECTROSCOPY; SEMICONDUCTOR DOPING;

119SN MOSSBAUER SPECTROSCOPY; DONOR ACCEPTORS; ELECTRONIC MECHANISMS; METAL-DOPED; MIXED VALENCE; MIXED VALENCE COMPOUNDS; OPTICAL PARAMETER;

INTEGRATED OPTICS;

EID: 84948741403     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMICND.2002.1105831     Document Type: Conference Paper

References (3)

1. V.Kuncser, A.Avramescu, G.Filoti, P.Rotaru,R.Podgorsek, M.Biebricher, H.Franke, J.Alloys Comp. 256, 86, 1997.
2. V.Kuncser, G.Filoti, R.Podgorsek, M.Biebricher, H.Franke, J. Phis. D: Appl. Phys. 31,2315, 1998.
3. M. Bulinski, V. Kuncser, I. Iova, A. Belea, H. Franke, G. Filoti, SPIE Proc.4068-68, 2000.