Quantum transport modeling in nano-scale devices

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2002-January, Issue , 2002, Pages 261-266

  Ogawa, M ^a   Tsuchiya, H ^a   Miyoshi, T ^a  

^a KOBE UNIVERSITY   (Japan)

Author keywords

Analytical models; Atomic layer deposition; Diodes; Electrons; Green's function methods; Integrated circuit modeling; MOSFETs; Nanoscale devices; Quantum mechanics; Tunneling

Indexed keywords

ANALYTICAL MODELS; ATOMIC LAYER DEPOSITION; DIODES; ELECTRON TUNNELING; ELECTRONS; GRADIENT METHODS; GREEN'S FUNCTION; MOSFET DEVICES; NANOTECHNOLOGY; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; QUANTUM THEORY; SEMICONDUCTOR DEVICES;

EFFECTIVE POTENTIAL METHODS; INTEGRATED CIRCUIT MODELING; MOSFETS; NANOSCALE DEVICE; NON EQUILIBRIUM GREEN'S FUNCTION METHOD; OPEN BOUNDARY CONDITION; QUANTUM TRANSPORT MODELS; SELF-CONSISTENT SOLUTION;

MONTE CARLO METHODS;

EID: 84948733574     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2002.1034568     Document Type: Conference Paper

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