Unique electron transport in ultrathin black phosphorene: Ab-initio study

Applied Surface Science

Volumn 356, Issue , 2015, Pages 881-887

  Srivastava, Anurag ^a   Khan, Md Shahzad ^a   Gupta, Sanjeev Kumar ^b   Pandey, Ravindra ^c  

^a ABV INDIAN INSTITUTE OF INFORMATION TECHNOLOGY AND MANAGEMENT   (India)

^b ST XAVIER S COLLEGE   (India)

^c MICHIGAN TECHNOLOGICAL UNIVERSITY   (United States)

Author keywords

Ab initio; Band structure; Black phosphorene; Electronic transport; Optical properties; Sensor

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON AFFINITY; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; FERMI LEVEL; MOLECULES; NITROGEN OXIDES; SENSORS;

AB INITIO; BLACK PHOSPHORENE; CONDUCTANCE CHANNELS; DEVICE PERFORMANCE; ELECTRONIC TRANSPORT; REFLECTIVE SPECTRUM; SENSOR APPLICATIONS; TRANSPORT ANALYSIS;

OPTICAL PROPERTIES;

EID: 84948684111     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2015.08.109     Document Type: Article

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