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Volumn 135, Issue 7, 1988, Pages 1783-1788

Growth of GalnAsSb Alloys by MOCVD and Characterization of GalnAsSb/GaSb p-n Photodiodes

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EID: 84948440511     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2096130     Document Type: Article
Times cited : (30)

References (14)
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  • 3
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    • J. Cryst. Growth
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    • Stringfellow, G.B.1
  • 8
    • 0011076597 scopus 로고
    • J. Cryst. Growth
    • K. Nakajima and K. Osumara, J. Cryst. Growth, 41, 87 (1977).
    • (1977) , vol.41 , pp. 87
    • Nakajima, K.1    Osumara, K.2
  • 10
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    • Ph.D. Thesis, Université des Sciences et Techniques du Languedoc, Montpellier, France
    • A. Melouah, Ph.D. Thesis, Université des Sciences et Techniques du Languedoc, Montpellier, France (1985).
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    • Melouah, A.1
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    • J. G. Gardeniers, H. H. de Moor, W. G. Van Sark, and L. J. Giling. First European Workshop on MOVPE, Aachen, Germany, March 29-April 1, 1987.
    • (1987)
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    • (1987)
    • Schirar, S.1    Montaner, A.2    Llinares, C.3
  • 14
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    • Heterostructure Lasers
    • part B Academic Press, Inc., New York
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.