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Volumn 3, Issue 47, 2015, Pages 24163-24168

Effects of annealing temperature of tin oxide electron selective layers on the performance of perovskite solar cells

(9) Ke, Weijun a,b Zhao, Dewei b Cimaroli, Alexander J b Grice, Corey R b Qin, Pingli a Liu, Qin a Xiong, Liangbin a Yan, Yanfa b Fang, Guojia a

a WUHAN UNIVERSITY (China)

b UNIVERSITY OF TOLEDO (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRONS; ENERGY GAP; OPEN CIRCUIT VOLTAGE; PEROVSKITE; SUBSTRATES; TIN OXIDES;

ANNEALING TEMPERATURES; ELECTROCHEMICAL CHARACTERIZATIONS; FLEXIBLE SUBSTRATE; HALIDE PEROVSKITES; INTERFACE RECOMBINATION; LOWER ELECTRON DENSITY; SELECTIVE LAYERS; SOLUTION-PROCESSED;

SOLAR CELLS;

EID: 84948423698 PISSN: 20507488 EISSN: 20507496 Source Type: Journal
DOI: 10.1039/c5ta06574g Document Type: Article

Times cited : (201)

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