Highly Efficient Copper-Indium-Selenide Quantum Dot Solar Cells: Suppression of Carrier Recombination by Controlled ZnS Overlayers

ACS Nano

Volumn 9, Issue 11, 2015, Pages 11286-11295

  Kim, Jae Yup ^a   Yang, Jiwoong ^b,c   Yu, Jung Ho ^b,c   Baek, Woonhyuk ^b,c   Lee, Chul Ho ^d   Son, Hae Jung ^a   Hyeon, Taeghwan ^b,c   Ko, Min Jae ^a,d  

^a Korea Institute of Science and Technology   (South Korea)

^b Institute for Basic Science   (South Korea)

^c Seoul National University   (South Korea)

^d Korea University   (South Korea)

Author keywords

copper indium selenide; heavy metal free; quantum dot sensitized solar cells; recombination control; ZnS overlayers

Indexed keywords

CONVERSION EFFICIENCY; COPPER; EFFICIENCY; ELECTROLYTES; ENERGY GAP; HEAVY METALS; INDIUM; NANOCRYSTALS; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS; SOLAR POWER GENERATION; ZINC SULFIDE;

COPPER-INDIUM-SELENIDE; ENERGETIC CHARACTERISTICS; KINETIC CHARACTERISTICS; NON-RADIATIVE RECOMBINATIONS; OVERLAYERS; PHOTOVOLTAIC PERFORMANCE; QUANTUM DOT SOLAR CELLS; QUANTUM DOT-SENSITIZED SOLAR CELLS;

QUANTUM EFFICIENCY;

EID: 84948406237     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b04917     Document Type: Article

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