256Kb ferroelectric nonvolatile memory technology for 1T/1C cell with 100ns read/write time at 3V

Integrated Ferroelectrics

Volumn 6, Issue 1-4, 1995, Pages 1-13

  De Araujo, Carlos A Paz ^b   Scott, Michael C ^b   Mcmillan, Larry D ^b   Nakakuma, Tetsuji ^a   Judai, Yuji ^a   Uemoto, Yasuhiro ^a   Nagano, Yoshihisa ^a   Hayashi, Shinichiro ^a   Azuma, Masamichi ^a   Otsuki, Tatsuo ^a   Kano, Gota ^a  

^a PANASONIC CORPORATION   (Japan)

^b Symetrix Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84948304433     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584589508019349     Document Type: Article

References (4)

1. T. Sumi, etal., ISSCC Digest of Technical Papers, pp. 268-269, Feb., 1994.
2. J. T. Evans, et al., IEEE Journal of Solid State Circuits, vol. 23, no. 5, pp. 1171-1175.,Oct., 1988
3. R. Womach, et al., ISSCC Digest of Technical Papers, pp. 242-243, Feb., 1989
4. S. S. Eaton, et al., ISSCC Digest of Technical Papers, pp. 130-131, Feb., 1988