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Applied Physics Letters

Volumn 107, Issue 19, 2015, Pages

III-nitride disk-in-nanowire 1.2 μ m monolithic diode laser on (001)silicon

(5) Hazari, Arnab a Aiello, Anthony a Ng, Tien Khee b Ooi, Boon S b Bhattacharya, Pallab a

a UNIVERSITY OF MICHIGAN (United States)

b KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; GALLIUM ALLOYS; III-V SEMICONDUCTORS; INDIUM ALLOYS; MOLECULAR BEAM EPITAXY; NITRIDES; POWER SEMICONDUCTOR DIODES; SEMICONDUCTOR ALLOYS; SILICON;

AERIAL DENSITY; DIODE HETEROSTRUCTURES; III-NITRIDE; MEASURED VALUES; PEAK EMISSIONS; RADIATIVE RECOMBINATION; SI SUBSTRATES; TIME-RESOLVED LUMINESCENCE;

NANOWIRES;

EID: 84947465896 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4935614 Document Type: Article

Times cited : (40)

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