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Volumn , Issue , 1992, Pages 885-892

State-variable modeling of high-level injection regions in power devices. Application to power system simulation

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; GRAPH THEORY; POWER SEMICONDUCTOR DEVICES;

EID: 84946966757     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.1992.254789     Document Type: Conference Paper
Times cited : (3)

References (16)
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    • Introducing switch function in power electronic simulator as a speed limiter
    • Florence, Italy
    • B. DHALLUIN, D. LAFORE and J. N. FIORINA. "Introducing switch function in power electronic simulator as a speed limiter." Proceedings of EPE, Florence, Italy, 1991, vol4, p 330-334.
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    • Hower, P.L.1
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    • A bipolar junction transistor model describing the static and dynamic behaviour
    • Wisconsin
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  • 16
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.