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Applied Physics Express

Volumn 8, Issue 11, 2015, Pages

Hydrogenated boron arsenide nanosheet: A promising candidate for bipolar magnetic semiconductor

(7) Zhang, Run Wu a Zhang, Chang Wen a Ji, Wei Xiao a Li, Sheng Shi a,b Wang, Pei Ji a Hu, Shu Jun b Yan, Shi Shen b

a UNIVERSITY OF JINAN (China)

b SHANDONG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; DEGREES OF FREEDOM (MECHANICS); ELECTRIC FIELDS; III-V SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; MAGNETISM; NANOSHEETS;

EFFICIENT CONTROL; ELECTRICAL MANIPULATION; FERROMAGNETIC SEMICONDUCTOR; SPIN DEGREES OF FREEDOM; SPIN ORIENTATIONS; SPINTRONIC DEVICE; STRONG ELECTRIC FIELDS; TWO-DIMENSIONAL MATERIALS;

SEMICONDUCTOR DOPING;

EID: 84946601117 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.7567/APEX.8.113001 Document Type: Article

Times cited : (19)

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