Physical and electrical bandwidths of integrated photodiodes in standard CMOS technology

2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

Volumn , Issue , 2003, Pages 95-98

  Radovanović, Saša ^a   Annema, AnneJohan ^a   Nauta, Bram ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; DIODES; ELECTRON DEVICES; OPERATIONAL AMPLIFIERS; PHOTODIODES; SOLID STATE DEVICES;

DIFFERENT GEOMETRY; ELECTRICAL BANDWIDTH; ELECTRONIC CIRCUITRY; INTEGRATED PHOTODIODES; PARASITIC CAPACITANCE; PARASITIC DIODES; PHOTODIODE STRUCTURES; STANDARD CMOS TECHNOLOGY;

BANDWIDTH;

EID: 84946414884     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2003.1283491     Document Type: Conference Paper

References (7)

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