Some physical properties of Hf-doped Sb2Te3 single crystals

International Conference on Thermoelectrics, ICT, Proceedings

Volumn 2003-January, Issue , 2003, Pages 38-41

  Plechacek T ^a   Navratil J ^a   Hajek P ^a   Krejcova A ^a   Lost'ak P ^a  

^a UNIVERSITY OF PARDUBICE   (Czech Republic)

Author keywords

Crystals; Hafnium; Plasma measurements; Plasma temperature; Reflectivity; Resonance; Resonant frequency; Tellurium; Temperature dependence; Temperature measurement

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; CRYSTALS; DOPING (ADDITIVES); ELECTRIC POWER FACTOR; ELECTRON RESONANCE; HAFNIUM; NATURAL FREQUENCIES; REFLECTION; RESONANCE; TELLURIUM; TELLURIUM COMPOUNDS; TEMPERATURE DISTRIBUTION; TEMPERATURE MEASUREMENT;

COMPLEX DIELECTRIC FUNCTIONS; ELECTRICAL CONDUCTIVITY; MEASUREMENT OF TEMPERATURE; MODIFIED BRIDGMAN METHOD; PLASMA MEASUREMENT; PLASMA TEMPERATURE; REFLECTANCE SPECTRUM; TEMPERATURE DEPENDENCE;

SINGLE CRYSTALS;

EID: 84946089835     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICT.2003.1287444     Document Type: Conference Paper

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