Study of emitter structures for InSb thermal diodes

International Conference on Thermoelectrics, ICT, Proceedings

Volumn 2003-January, Issue , 2003, Pages 578-581

  Kucherov, Y ^a   Hagelstein, P ^b   Sevastyanenko, V ^a   Brown, H L ^a  

^a ENECO Inc   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Circuits; Current measurement; Impurities; Ion implantation; Ionization; Semiconductor diodes; Tellurium; Temperature distribution; Thermal conductivity; Thermoelectricity

Indexed keywords

EFFICIENCY; ELECTRIC CURRENT MEASUREMENT; IMPURITIES; INDIUM ANTIMONIDES; ION IMPLANTATION; IONIZATION; NETWORKS (CIRCUITS); SEMICONDUCTING TELLURIUM; TELLURIUM; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY; THERMOELECTRICITY;

ABSOLUTE EFFICIENCIES; EMITTER STRUCTURES; FIGURE OF MERITS; POTENTIAL BARRIERS; SYSTEMATIC STUDY; THERMAL DIODES; THERMO-ELECTRIC MATERIALS;

SEMICONDUCTOR DIODES;

EID: 84946086306     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICT.2003.1287579     Document Type: Conference Paper

References (6)

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3. st International Conference on Thermoelectrics (2002), pp.400-403.
4. st International Conference on Thermoelectrics (2002), pp. 431-434.
5. Landolt-Bornstein. Numerical Data and Functional Relationships in Science and Technology, Springer-Verlag, 1982.
6. P. Hagelstein, Y. Kucherov, Presented at this conference.