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Volumn 3, Issue , 2003, Pages 1903-1908
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SiC power converter technology in future
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Author keywords
Capacitors; Circuits; Diodes; Frequency conversion; Inverters; Matrix converters; Resonance; Silicon carbide; Temperature; Voltage
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Indexed keywords
CAPACITORS;
DIODES;
EFFICIENCY;
ELECTRIC DRIVES;
ELECTRIC INVERTERS;
ELECTRIC MACHINERY;
ELECTRIC POTENTIAL;
FREQUENCY CONVERTERS;
MATRIX CONVERTERS;
NETWORKS (CIRCUITS);
OPTICAL FREQUENCY CONVERSION;
POWER CONVERTERS;
RESONANCE;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICES;
SEMICONDUCTOR DIODES;
SILICON;
SILICON CARBIDE;
SILICON WAFERS;
TEMPERATURE;
CONVERTER TECHNOLOGY;
HIGH FREQUENCY HF;
HIGH FREQUENCY POWER CONVERTER;
INPUT AND OUTPUTS;
PHYSICAL CHARACTERISTICS;
SILICON CARBIDES (SIC);
SWITCHING DEVICES;
WAFER TEMPERATURE;
AC-AC POWER CONVERTERS;
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EID: 84946012753
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEMDC.2003.1210712 Document Type: Conference Paper |
Times cited : (5)
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References (5)
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