-
1
-
-
0029359285
-
1-V Power supply high-speed digital circuit technology with multithreshold-voltage CMOS
-
S. Mutoh, et al., "1-V Power Supply High-Speed Digital Circuit Technology with Multithreshold-Voltage CMOS," IEEE J. of Solid-State Circuits, 30, pp. 847-854 (1995).
-
(1995)
IEEE J. of Solid-State Circuits
, vol.30
, pp. 847-854
-
-
Mutoh, S.1
-
2
-
-
0033221245
-
An 18-A Standby Current 1.8V, 200MHz microprocessor with self-substrate-biased data-retention mode
-
H. Mizuno, et al., "An 18-A Standby Current 1.8V, 200MHz Microprocessor with Self-Substrate-Biased Data-Retention Mode," IEEE J. Solid-State Circuits, 34, pp. 1492-1500 (1999).
-
(1999)
IEEE J. Solid-State Circuits
, vol.34
, pp. 1492-1500
-
-
Mizuno, H.1
-
4
-
-
0033281017
-
A high-voltage output buffer fabricated on a 2v CMOS technology
-
L. T. Clark, "A High-Voltage Output Buffer Fabricated on a 2V CMOS Technology," Proc. 1999 IEEE Symposium on VLSI Circuits, pp. 61-62.
-
Proc. 1999 IEEE Symposium on VLSI Circuits
, pp. 61-62
-
-
Clark, L.T.1
-
5
-
-
0033221989
-
High-Voltage-Tolerant I/O buffers with low-voltage CMOS process
-
G. B. Singh and R. B. Salem, "High-Voltage-Tolerant I/O Buffers with Low-Voltage CMOS Process," IEEE J. of Solid-State Circuits, 34, pp. 1512-1525 (1999).
-
(1999)
IEEE J. of Solid-State Circuits
, vol.34
, pp. 1512-1525
-
-
Singh, G.B.1
Salem, R.B.2
-
7
-
-
0032205181
-
Designing power supply clamps for electrostatic discharge protection of integrated circuits
-
November
-
T.J. Maloney, "Designing Power Supply Clamps for Electrostatic Discharge Protection of Integrated Circuits", Microelectronics Reliability 38, No. 11, pp. 1691-1703 (November, 1998).
-
(1998)
Microelectronics Reliability
, vol.38
, Issue.11
, pp. 1691-1703
-
-
Maloney, T.J.1
-
8
-
-
0041537580
-
Transistor elements for 30nm physical gate lengths and beyond
-
May
-
B. Doyle et al., "Transistor Elements for 30nm Physical Gate Lengths and Beyond." Intel Technology Journal. http://developer.intel.com/technology/itj/2002/volume06issue02/(May 2002).
-
(2002)
Intel Technology Journal
-
-
Doyle, B.1
-
9
-
-
0003899569
-
30 nm physical gate length CMOS transistors with 1.0 ps n-MOS and 1.7 ps p-MOS gate delays
-
R. Chau et al., "30 nm physical gate length CMOS transistors with 1.0 ps n-MOS and 1.7 ps p-MOS gate delays," IEDM Tech. Digest, 2000, pp. 45-48.
-
(2000)
IEDM Tech. Digest
, pp. 45-48
-
-
Chau, R.1
-
10
-
-
0033697180
-
Scaling challenges and device design requirements for high-performance sub-50 nm gate length planar CMOS transistors
-
T. Ghani et al., "Scaling challenges and device design requirements for high-performance sub-50 nm gate length planar CMOS transistors," VLSI Symposium Tech. Digest, 2000, pp. 174-175.
-
(2000)
VLSI Symposium Tech. Digest
, pp. 174-175
-
-
Ghani, T.1
-
11
-
-
0033345379
-
50nm Gate-Length CMOS transistor with super-halo: Design, process, and reliability
-
B. Yu et al., "50nm Gate-Length CMOS Transistor with Super-Halo: Design, Process, and Reliability," IEDM Tech. Digest, 1999, pp.653-655.
-
(1999)
IEDM Tech. Digest
, pp. 653-655
-
-
Yu, B.1
-
12
-
-
0033359156
-
Technology scaling behavior of optimum reverse body bias for standby leakage power reduction in CMOS ic's
-
A. Keshavarzi, S. Narenda, S. Borkar, C. Hawkins, K. Roy and V. De, "Technology Scaling Behavior of Optimum Reverse Body Bias for Standby Leakage Power Reduction in CMOS IC's", Proceedings of 1999 International Symposium on Low Power Electronics and Design, pp. 252-254.
-
Proceedings of 1999 International Symposium on Low Power Electronics and Design
, pp. 252-254
-
-
Keshavarzi, A.1
Narenda, S.2
Borkar, S.3
Hawkins, C.4
Roy, K.5
De, V.6
-
13
-
-
84945196173
-
-
issued Sept. 21 assigned to
-
T.J. Maloney, US Patent 5,956,219, issued Sept. 21, 1999, assigned to Intel.
-
(1999)
Intel
-
-
Maloney, T.J.1
-
15
-
-
0035277904
-
-
Also published March
-
Also published in Microelectronics Reliability 41, No. 3, pp. 335-348 (March, 2001).
-
(2001)
Microelectronics Reliability
, vol.41
, Issue.3
, pp. 335-348
-
-
-
17
-
-
0037893830
-
-
issued Jan. 21 assigned to Intel
-
T.J. Maloney and W. Kan, "RC Timer Scheme", US Patent 6,510,033, issued Jan. 21, 2003, assigned to Intel.
-
(2003)
RC Timer Scheme
-
-
Maloney, T.J.1
Kan, W.2
-
18
-
-
51349120837
-
-
Patent application, filed Dec. 22
-
L.T. Clark, P. Elamanchili, T. Maloney, "Electrostatic Discharge Protection Device and Method Therefor", US Patent application, filed Dec. 22, 2000.
-
(2000)
Electrostatic Discharge Protection Device and Method Therefor
-
-
Clark, L.T.1
Elamanchili, P.2
Maloney, T.3
-
19
-
-
0035507074
-
An embedded 32-b microprocessor core for low-power and high-performance applications
-
L.T. Clark, et al., "An Embedded 32-b Microprocessor Core for Low-Power and High-Performance Applications", IEEE J. Solid-State Circuits, 36, pp. 1599-1608 (2001).
-
(2001)
IEEE J. Solid-State Circuits
, vol.36
, pp. 1599-1608
-
-
Clark, L.T.1
-
20
-
-
0034452603
-
A 130 nm Generation logic technology featuring 70 nm transistors, Dual Vt transistors and 6 Layers of Cu Interconnects
-
S. Tyagi et al., "A 130 nm Generation Logic Technology Featuring 70 nm Transistors, Dual Vt Transistors and 6 Layers of Cu Interconnects", IEDM Tech. Digest, 2000, pp. 567-570.
-
(2000)
IEDM Tech. Digest
, pp. 567-570
-
-
Tyagi, S.1
-
23
-
-
0003571183
-
-
published by Wiley Interscience, November
-
S. Dabral and T.J. Maloney, Basic ESD and I/O Design, published by Wiley Interscience, November 1998, 302 pages. http://www.amazon.com/exec/obidos/ASIN/0471 253596/.
-
(1998)
Basic ESD and I/O Design
-
-
Dabral, S.1
Maloney, T.J.2
|