The influence of silicon nitride cap on NBTI and fermi pinning in HfO2 gate stacks

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Volumn , Issue , 2003, Pages 20-23

  Sasaki, T ^a   Ootsuka, F ^a   Hoshi, T ^a   Kawahara, T ^a   Maeda, T ^a   Yasuhira, M ^a   Arikado, T ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Electrodes; Gate leakage; Hafnium oxide; High K gate dielectrics; Hydrogen; Niobium compounds; Nitrogen; Silicon compounds; Stress; Titanium compounds

Indexed keywords

DIELECTRIC MATERIALS; ELECTRODES; HAFNIUM OXIDES; HYDROGEN; INTEGRATED CIRCUITS; NIOBIUM COMPOUNDS; NIOBIUM OXIDE; NITROGEN; SILICON COMPOUNDS; SILICON NITRIDE; STRESSES; TITANIUM COMPOUNDS; TITANIUM OXIDES;

CAP LAYERS; FERMI PINNING; GATE ELECTRODES; GATE LEAKAGES; GATE STACKS; HIGH- K GATE DIELECTRICS; SHIFT-AND;

GATE DIELECTRICS;

EID: 84945138797     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2003.159174     Document Type: Conference Paper

References (6)

1. C.Hobbs, H.Tseng et al.,IEDM, p.651(2001)
2. A.L.P.Rotondaro et al., Symp.of VLSI Technology, p.148(2002)
3. C.Hobbs, L.Fonseca et al., Symp.of VLSI Technology, p.9(2003)
4. A.Shanware, M.R.Visokay et al., IRPS, p.208(2003)
5. A.Kerber, E.Cartier et al., Symp.of VLSI Technology, p,76(2002)
6. T.Nabatame, K.Iwamoto et al., Symp.of VLSI Technology, p.9(2003)