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Volumn 51, Issue 86, 2015, Pages 15692-15695

Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

(16) Delabie, A a,b Caymax, M a Groven, B a,b Heyne, M a,b Haesevoets, K a,b Meersschaut, J a Nuytten, T a Bender, H a Conard, T a Verdonck, P a Van Elshocht, S a De Gendt, S a,b Heyns, M a,b Barla, K a Radu, I a Thean, A a

a IMEC (Belgium)

b UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DIETHYLZINC; HALIDE; HYDROGEN SULFIDE; INORGANIC COMPOUND; REDUCING AGENT; TRANSITION ELEMENT; TUNGSTEN HEXAFLUORIDE; UNCLASSIFIED DRUG;

ARTICLE; ATOMIC FORCE MICROSCOPY; LIMIT OF QUANTITATION; LOW TEMPERATURE; OXIDATION; OXIDATION REDUCTION REACTION; RAMAN SPECTROMETRY; RUTHERFORD BACKSCATTERING SPECTROMETRY; SEMICONDUCTOR; SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84944754621 PISSN: 13597345 EISSN: 1364548X Source Type: Journal
DOI: 10.1039/c5cc05272f Document Type: Article

Times cited : (76)

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