Managing Carrier Lifetime and Doping Property of Lead Halide Perovskite by Postannealing Processes for Highly Efficient Perovskite Solar Cells

Journal of Physical Chemistry C

Volumn 119, Issue 40, 2015, Pages 22812-22819

  Song, Dandan ^a   Cui, Peng ^a   Wang, Tianyue ^a   Wei, Dong ^a   Li, Meicheng ^a,b   Cao, Fanghao ^a,c   Yue, Xiaopeng ^a   Fu, Pengfei ^a   Li, Yaoyao ^a   He, Yue ^a   Jiang, Bing ^a   Trevor, Mwenya ^a  

^a NORTH CHINA ELECTRIC POWER UNIVERSITY   (China)

^b Chongqing Materials Research Institute   (China)

^c JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; EFFICIENCY; OPEN CIRCUIT VOLTAGE; PEROVSKITE; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SOLAR POWER GENERATION;

ANNEALING TEMPERATURES; BIMOLECULAR RECOMBINATION; DEVICE PERFORMANCE; DOPING PROPERTIES; HALIDE PEROVSKITES; INTRINSIC FEATURES; PHOTOVOLTAIC PERFORMANCE; POSTANNEALING PROCESS;

SOLAR CELLS;

EID: 84943795553     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/acs.jpcc.5b06859     Document Type: Article

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