Ligand-hole in [SnI6] unit and origin of band gap in photovoltaic perovskite variant Cs2SnI6

Bulletin of the Chemical Society of Japan

Volumn 88, Issue 9, 2015, Pages 1250-1255

  Xiao, Zewen ^a   Lei, Hechang ^a,b   Zhang, Xiao ^a   Zhou, Yuanyuan ^c   Hosono, Hideo ^a   Kamiya, Toshio ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b RENMIN UNIVERSITY OF CHINA   (China)

^c Brown University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CESIUM; CESIUM COMPOUNDS; DENSITY FUNCTIONAL THEORY; ENERGY GAP; LIGANDS; OXIDATION; PEROVSKITE;

CONDUCTION-BAND MINIMUM; COVALENCIES; INTRA-CLUSTER; IONIC MODELS; OXIDATION STATE; PHOTOVOLTAIC; PHOTOVOLTAIC MATERIALS; VALENCE-BAND MAXIMUMS;

TIN;

EID: 84942879026     PISSN: 00092673     EISSN: 13480634     Source Type: Journal    
DOI: 10.1246/bcsj.20150110     Document Type: Article

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