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Journal of Materials Chemistry A

Volumn 3, Issue 39, 2015, Pages 19674-19678

Hydrochloric acid accelerated formation of planar CH3NH3PbI3 perovskite with high humidity tolerance

(3) Li, Ge a Zhang, Taiyang a Zhao, Yixin a

a SHANGHAI JIAO TONG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE COMPOUNDS; DEPOSITION; HYDROCHLORIC ACID; LAYERED SEMICONDUCTORS; PEROVSKITE; PEROVSKITE SOLAR CELLS;

AMBIENT CONDITIONS; HUMIDITY LEVELS; NOVEL INTERMEDIATES; ONE-STEP METHODS; PEROVSKITE FILMS; PRECURSOR FILMS; PRECURSOR SOLUTIONS; SEQUENTIAL DEPOSITION;

LEAD COMPOUNDS;

EID: 84942846364 PISSN: 20507488 EISSN: 20507496 Source Type: Journal
DOI: 10.1039/c5ta06172e Document Type: Article

Times cited : (122)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.