Nanocrystalline Ferroelectric BiFeO3 Thin Films by Low-Temperature Atomic Layer Deposition

Chemistry of Materials

Volumn 27, Issue 18, 2015, Pages 6322-6328

  Coll, Mariona ^a   Gazquez, Jaume ^a   Fina, Ignasi ^b,c   Khayat, Zakariya ^d   Quindeau, Andy ^b   Alexe, Marin ^c   Varela, Maria ^e   Trolier Mckinstry, Susan ^d   Obradors, Xavier ^a   Puig, Teresa ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c UNIVERSITY OF WARWICK   (United Kingdom)

^d PENNSYLVANIA STATE UNIVERSITY   (United States)

^e INSTITUTO PLURIDISCIPLINAR   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; BISMUTH COMPOUNDS; ENERGY GAP; FERROELECTRIC FILMS; FERROELECTRICITY; FILM PREPARATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IRON COMPOUNDS; NANOCRYSTALS; PEROVSKITE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SPECTROSCOPIC ELLIPSOMETRY; STRONTIUM TITANATES; SUBSTRATES; TEMPERATURE;

AS-DEPOSITED FILMS; FERROELECTRIC BEHAVIOR; FERROELECTRIC OXIDES; FERROELECTRIC PEROVSKITES; NANOCRYSTALLINE FERROELECTRICS; PIEZOELECTRIC FORCE MICROSCOPY; POSTANNEALED FILMS; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

THIN FILMS;

EID: 84942122808     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/acs.chemmater.5b02093     Document Type: Article

References (74)

1. Heber, J. Materials science: Enter the oxides Nature 2009, 459, 28-30 10.1038/459028a
2. Lines, M. E.; Glass, A. M. Principles and Applications of Ferroelectrics and Related Materials; Clarendon Press: Oxford, U.K., 2001.
3. Park, B. H.; Kang, B. S.; Bu, S. D.; Noh, T. W.; Lee, J.; Jo, W. Lanthanum-substituted bismuth titanate for use in non-volatile memories Nature 1999, 401, 682-684 10.1038/44352
4. Eom, C. B.; Trolier-McKinstry, S. Thin-film piezoelectric MEMS MRS Bull. 2012, 37, 1007-1021 10.1557/mrs.2012.273
5. Mathews, S.; Ramesh, R.; Venkatesan, T.; Benedetto, J. Ferroelectric field effect transistor based on epitaxial perovskite heterostructures Science 1997, 276, 238-240 10.1126/science.276.5310.238
6. Grinberg, I.; West, D. V.; Torres, M.; Gou, G. Y.; Stein, D. M.; Wu, L. Y.; Chen, G. N.; Gallo, E. M.; Akbashev, A. R.; Davies, P. K.; Spanier, J. E.; Rappe, A. M. Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials Nature 2013, 503, 509-512 10.1038/nature12622
7. 3 Science 2009, 324, 63-66 10.1126/science.1168636
8. 3-Fe Appl. Phys. 1978, 17, 413-416 10.1007/BF00886214
9. 3 multiferroic thin film heterostructures Science 2003, 299, 1719-1722 10.1126/science.1080615
10. Catalan, G.; Noheda, B.; McAneney, J.; Sinnamon, L. J.; Gregg, J. M. Strain gradients in epitaxial ferroelectrics Phys. Rev. B: Condens. Matter Mater. Phys. 2005, 72, 020102 10.1103/PhysRevB.72.020102
11. Tybell, T.; Ahn, C. H.; Triscone, J. M. Ferroelectricity in thin perovskite films Appl. Phys. Lett. 1999, 75, 856-858 10.1063/1.124536
12. Park, S. E.; Shrout, T. R. Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals J. Appl. Phys. 1997, 82, 1804-1811 10.1063/1.365983
13. Dawber, M.; Rabe, K. M.; Scott, J. F. Physics of thin-film ferroelectric oxides Rev. Mod. Phys. 2005, 77, 1083-1130 10.1103/RevModPhys.77.1083
14. Shaw, T. M.; Trolier-McKinstry, S.; McIntyre, P. C. The properties of ferroelectric films at small dimensions Annu. Rev. Mater. Sci. 2000, 30, 263-298 10.1146/annurev.matsci.30.1.263
15. Setter, N.; Damjanovic, D.; Eng, L.; Fox, G.; Gevorgian, S.; Hong, S.; Kingon, A.; Kohlstedt, H.; Park, N. Y.; Stephenson, G. B.; Stolitchnov, I.; Taganstev, A. K.; Taylor, D. V.; Yamada, T.; Streiffer, S. Ferroelectric thin films: Review of materials, properties, and applications J. Appl. Phys. 2006, 100, 051606 10.1063/1.2336999
16. Farokhipoor, S.; Magen, C.; Venkatesan, S.; Iniguez, J.; Daumont, C. J. M.; Rubi, D.; Snoeck, E.; Mostovoy, M.; de Graaf, C.; Muller, A.; Doblinger, M.; Scheu, C.; Noheda, B. Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide Nature 2014, 515, 379-383 10.1038/nature13918
17. Ponath, P.; Fredrickson, K.; Posadas, A. B.; Ren, Y.; Wu, X. Y.; Vasudevan, R. K.; Okatan, M. B.; Jesse, S.; Aoki, T.; McCartney, M. R.; Smith, D. J.; Kalinin, S. V.; Lai, K.; Demkov, A. A. Carrier density modulation in a germanium heterostructure by ferroelectric switching Nat. Commun. 2015, 6, 6067 10.1038/ncomms7067
18. Nakajima, T.; Shinoda, K.; Tsuchiya, T. UV-assisted nucleation and growth of oxide films from chemical solutions Chem. Soc. Rev. 2014, 43, 2027-2041 10.1039/C3CS60222B
19. Paetzel, R.; Turk, B.; Brune, J.; Govorkov, S.; Simon, F. Lasers solutions for wafer and thin-film annealing Phys. Status Solidi C 2008, 5, 3215-3220 10.1002/pssc.200779519
20. 3 thin films by pulsed excimer laser annealing IEEE Trans. Ultrason. Ferroelectr. Freq. Control 2010, 57, 2182-2191 10.1109/TUFFC.2010.1676
21. Bretos, I.; Jimenez, R.; Wu, A. Y.; Kingon, A. I.; Vilarinho, P. M.; Calzada, M. L. Activated Solutions Enabling Low-Temperature Processing of Functional Ferroelectric Oxides for Flexible Electronics Adv. Mater. 2014, 26, 1405-1409 10.1002/adma.201304308
22. Mandeljc, M.; Malič, B.; Kosec, M. PZT Thin Films with Decreasing Thickness Crystallized at 400°C Integr. Ferroelectr. 2003, 52, 205-213 10.1080/10584580390254952
23. Calzada, M. L.; Bretos, I.; Jiménez, R.; Guillon, H.; Pardo, L. Low-Temperature Processing of Ferroelectric Thin Films Compatible with Silicon Integrated Circuit Technology Adv. Mater. 2004, 16, 1620-1624 10.1002/adma.200306401
24. Pinna, N.; Knez, M. Atomic Layer Deposition of Nanostructured Materials; Wiley-VCH: Weinheim, Germany, 2012.
25. Parsons, G. N.; George, S. M.; Knez, M. Progress and future directions for atomic layer deposition and ALD-based chemistry MRS Bull. 2011, 36, 865-871 10.1557/mrs.2011.238
26. Lubitz, M.; Medina, P. A.; Antic, A.; Rosin, J. T.; Fahlman, B. D. Cost-Effective Systems for Atomic Layer Deposition J. Chem. Educ. 2014, 91, 1022-1027 10.1021/ed4007698
27. International Technology Roadmap for Semiconductors, Emerging Research Materials Summary; ITRS, 2013.
28. Mackus, A. J. M.; Bol, A. A.; Kessels, W. M. M. The use of atomic layer deposition in advanced nanopatterning Nanoscale 2014, 6, 10941-10960 10.1039/C4NR01954G
29. Bae, C.; Shin, H.; Nielsch, K. Surface modification and fabrication of 3D nanostructures by atomic layer deposition MRS Bull. 2011, 36, 887-897 10.1557/mrs.2011.264
30. Murray, C.; Elliott, S. D. Density Functional Theory Predictions of the Composition of Atomic Layer Deposition-Grown Ternary Oxides ACS Appl. Mater. Interfaces 2013, 5, 3704-3715 10.1021/am400310p
31. Leskelä, M.; Ritala, M.; Nilsen, O. Novel materials by atomic layer deposition and molecular layer deposition MRS Bull. 2011, 36, 877-884 10.1557/mrs.2011.240
32. Wiemer, C.; Lamagna, L.; Fanciulli, M. Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications Semicond. Sci. Technol. 2012, 27, 074013 10.1088/0268-1242/27/7/074013
33. Coll, M.; Montero Moreno, J. M.; Gazquez, J.; Nielsch, K.; Obradors, X.; Puig, T. Low Temperature Stabilization of Nanoscale Epitaxial Spinel Ferrite Thin Films by Atomic Layer Deposition Adv. Funct. Mater. 2014, 24, 5368-5374 10.1002/adfm.201400517
34. Coll, M.; Gazquez, J.; Palau, A.; Varela, M.; Obradors, X.; Puig, T. Low Temperature epitaxial ultrathin film oxides and nanostructures by atomic layer deposition Chem. Mater. 2012, 24, 3732-3737 10.1021/cm301864c
35. 3-buffered Si(001) by atomic layer deposition Appl. Phys. Lett. 2014, 104, 082910 10.1063/1.4867469
36. 2 thin films with functional complex oxides and 3D patterns Thin Solid Films 2014, 553, 7-12 10.1016/j.tsf.2013.08.131
37. Spaldin, N. A.; Cheong, S. W.; Ramesh, R. Multiferroics: Past, present, and future Phys. Today 2010, 63, 38-43 10.1063/1.3502547
38. Catalan, G.; Scott, J. F. Physics and Applications of Bismuth Ferrite Adv. Mater. 2009, 21, 2463-2485 10.1002/adma.200802849
39. 3 epitaxial thin films and devices: past, present and future J. Phys.: Condens. Matter 2014, 26, 473201 10.1088/0953-8984/26/47/473201
40. 3 films Nat. Mater. 2009, 8, 485-493 10.1038/nmat2432
41. Akbashev, A. R.; Chen, G.; Spanier, J. E. A Facile Route for Producing Single-Crystalline Epitaxial Perovskite Oxide Thin Films Nano Lett. 2014, 14, 44-49 10.1021/nl4030038
42. 2O J. Phys. Chem. C 2013, 117, 24579-24585 10.1021/jp4080652
43. 3 Films from Deposition of Atomic Layers with Greatly Improved Leakage and Ferroelectric Properties ACS Appl. Mater. Interfaces 2014, 6, 443-449 10.1021/am404498y
44. 3 J. Am. Ceram. Soc. 1967, 50, 437 10.1111/j.1151-2916.1967.tb15153.x
45. 3 thin films processed via chemical solution deposition: Structural and electrical characterization J. Appl. Phys. 2005, 97, 094901 10.1063/1.1881776
46. 3 Chem. Vap. Deposition 2007, 13, 232-238 10.1002/cvde.200606571
47. Fujino, S.; Murakami, M.; Lim, S. H.; Wuttig, M.; Salamanca-Riba, L. G.; Takeuchi, I. Ferroelectric properties of multiphase Bi-Fe-O thin films Solid State Ionics 2007, 178, 1257-1261 10.1016/j.ssi.2007.07.004
48. 3 thin films by pulsed laser deposition Phys. Rev. B: Condens. Matter Mater. Phys. 2009, 80, 024105 10.1103/PhysRevB.80.024105
49. Chastain, J.; Moulder, J. F. Handbook of X-ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data; Perkin-Elmer Corp., Physical Electronics Division: Eden Prairie, MN, 1995.
50. 3 Phys. Rev. B: Condens. Matter Mater. Phys. 1986, 34, 7318-7333 10.1103/PhysRevB.34.7318
51. 3) multiferroics J. Electron Spectrosc. Relat. Phenom. 2011, 184, 16-23 10.1016/j.elspec.2010.10.004
52. 3 multiferroic thin film heterostructures" Science 2005, 307, 1203 10.1126/science.1105422
53. 3 multiferroic thin film heterostructures" Science 2005, 307, 1203 10.1126/science.1103959
54. 3 through Substrate Vicinality Adv. Mater. 2007, 19, 2662-2666 10.1002/adma.200602972
55. 3 films: domain structure and polarization dynamics Phase Transitions 2006, 79, 991-1017 10.1080/01411590601067144
56. Kalinin, S. V.; Morozovska, A. N.; Chen, L. Q.; Rodriguez, B. J. Local polarization dynamics in ferroelectric materials Rep. Prog. Phys. 2010, 73, 056502 10.1088/0034-4885/73/5/056502
57. www.asylumresearch.com/Applications/PFMAppNote/PFMAppNote.shtml.
58. Kalinin, S. V.; Jesse, S.; Tselev, A.; Baddorf, A. P.; Balke, N. The role of electrochemical phenomena in scanning probe microscopy of ferroelectric thin films ACS Nano 2011, 5, 5683-5691 10.1021/nn2013518
59. Arruda, T. M.; Kumar, A.; Kalinin, S. V.; Jesse, S. Mapping irreversible electrochemical processes on the nanoscale: Ionic phenomena in Li ion conductive glass ceramics Nano Lett. 2011, 11, 4161-4167 10.1021/nl202039v
60. Junquera, J.; Ghosez, P. Critical thickness for ferroelectricity in perovskite ultrathin films Nature 2003, 422, 506-509 10.1038/nature01501
61. Ahn, C. H.; Rabe, K. M.; Triscone, J. M. Ferroelectricity at the nanoscale: Local polarization in oxide thin films and heterostructures Science 2004, 303, 488-491 10.1126/science.1092508
62. Polking, M. J.; Han, M. G.; Yourdkhani, A.; Petkov, V.; Kisielowski, C. F.; Volkov, V. V.; Zhu, Y. M.; Caruntu, G.; Alivisatos, A. P.; Ramesh, R. Ferroelectric order in individual nanometre-scale crystals Nat. Mater. 2012, 11, 700-709 10.1038/nmat3371
63. Tiedke, S.; Schmitz, T.; Prume, K.; Roelofs, A.; Schneller, T.; Kall, U.; Waser, R.; Ganpule, C. S.; Nagarajan, V.; Stanishevsky, A.; Ramesh, R. Direct hysteresis measurements of single nanosized ferroelectric capacitors contacted with an atomic force microscope Appl. Phys. Lett. 2001, 79, 3678-3680 10.1063/1.1421638
64. Szafraniak, I.; Harnagea, C.; Scholz, R.; Bhattacharyya, S.; Hesse, D.; Alexe, M. Ferroelectric epitaxial nanocrystals obtained by a self-patterning method Appl. Phys. Lett. 2003, 83, 2211-2213 10.1063/1.1611258
65. Yun, W. S.; Urban, J. J.; Gu, Q.; Park, H. Ferroelectric properties of individual barium titanate nanowires investigated by scanned probe Microscopy Nano Lett. 2002, 2, 447-450 10.1021/nl015702g
66. Ma, T. P.; Han, J. P. Why is nonvolatile ferroelectric memory field-effect transistor still elusive? IEEE Electron Device Lett. 2002, 23, 386-388 10.1109/LED.2002.1015207
67. Wachtel, E.; Lubomirsky, I. Quasi-amorphous inorganic thin films: Non-crystalline polar phases Adv. Mater. 2010, 22, 2485-2493 10.1002/adma.200903232
68. 3 film Phys. Rev. B: Condens. Matter Mater. Phys. 2011, 84, 205426 10.1103/PhysRevB.84.205426
69. Mackenzie, J. D.; Xu, Y. H. Ferroelectric materials by the sol-gel method J. Sol-Gel Sci. Technol. 1997, 8, 673-679 10.1007/BF02436921
70. Jellison, G. E.; Modine, F. A. Parameterization of the optical functions of amorphous materials in the interband region Appl. Phys. Lett. 1996, 69, 371-373 10.1063/1.118064
71. 3 Appl. Phys. Lett. 2008, 92, 121915 10.1063/1.2901168
72. 3 epitaxial films J. Appl. Phys. 2010, 107, 123524 10.1063/1.3437059
73. 3 films Appl. Phys. Lett. 2014, 105, 122905 10.1063/1.4896508
74. Wang, F. G.; Grinberg, I.; Rappe, A. M. Band gap engineering strategy via polarization rotation in perovskite ferroelectrics Appl. Phys. Lett. 2014, 104, 152903 10.1063/1.4871707