Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn 2002-January, Issue , 2002, Pages 475-478

  Stewart, K ^a   Buda, M ^a   Wong Leung, J ^a   Fu, L ^a   Jagadish, C ^a   Stiff Roberts, A ^b   Bhattacharya, P ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INFRARED DETECTORS; ION IMPLANTATION; MICROELECTRONICS; MOLECULAR BEAMS; NANOCRYSTALS; PHOTODETECTORS; SEMICONDUCTOR QUANTUM DOTS; STRAIN RELAXATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEVICE PERFORMANCE; DOUBLE CRYSTAL X RAY DIFFRACTION; ELECTRICAL CHARACTERISTIC; EPITAXIALLY GROWN; OPTICAL AND ELECTRICAL PROPERTIES; QUANTUM DOT INFRARED PHOTODETECTOR; RAPID THERMAL ANNEALING (RTA);

RAPID THERMAL ANNEALING;

EID: 84941619294     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMMAD.2002.1237293     Document Type: Conference Paper

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