Special problems in IMPATT diode power amplifiers

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 1972, Pages 34-35

  Hines, M E ^a  

^a M/A COM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIODE AMPLIFIERS; DIODES; EQUIVALENT CIRCUITS; POWER AMPLIFIERS;

MICROWAVE POWER; REFLECTION AMPLIFIERS; TRANSMISSION CAVITY; TWO-PORT NETWORK;

IMPATT DIODES;

EID: 84941545001     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.1972.1155093     Document Type: Conference Paper

References (8)

1. Haddad, G. I., Greiling, P. T., Schroeder, W. E., "Basic Principles of Avalanche Transit-Time Devices", IEEE Trans. MTT-18, P. 752; Nov., 1970.
2. Haddad, G. I. and Greiling, P. T., "Large Signal Equivalent Circuit of Avalanche Transit-Time Devices", IEEE Trans. MTT-18, p. 842; Nov., 1970.
3. Scherer, E. F., "Large Signal Operation of Avalanche Diode Amplifiers", IEEE Trans. MTT-18, p. 922; Nov., 1970.
4. Hines, M. E., "Negative Resistance Diode Power Amplification", IEEE Trans. ED-17, p. 1-8; Jan., 1970.
5. Schroeder, W. E. and Haddad, G. I., "The Effect of Temperature on the Operation of an IMP ATT Diode", Proc. IEEE, p. 1242-1243; Aug., 1971.
6. Tatsuguchi, I., Deitrich, N. R., and Swan, C. B., "Power-Noise Characterization of Phase-locked IMPATT Oscillators", ISSCC 71 Digest of Technical Papers, p. 170-171.
7. Chong, W., Lee, and Tsai, W. C., "High Power GaAs Avalanche Diode Amplifiers", 1971 IEEE International Convention Digest of Papers, p. 368-369
8. Hines, M. E., Paik, S. F., and Wallace, R. N., "Distributed Unidirectional Microwave Amplification with Negative Resistance Diodes", 1971 IEEE International Convention Digest of Papers, p. 366-367.