A General Simulator for VLSI Lithography and Etching Processes: Part II-Application to Deposition and Etching

IEEE Journal of Solid-State Circuits

Volumn 15, Issue 4, 1980, Pages 520-524

  Oldham, William G ^a   Neureuther, Andrew R ^a   Sung, Chiakang ^a   Reynolds, John L ^a   Nandgaonkar, Sharad Narayan ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84941440119     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1980.1051432     Document Type: Article

References (9)

1. W. Oldham, S. Nandgaonkar, A. Neureuther, and M. OToole, “A general simulator for VLSI lithography and etching processes: Part I-Applications to projection lithography,” IEEE Trans. Electron Devices, vol. ED-26, no. 4, pp. 717–722, Apr. 1979.
2. I.A. Blech, D.B. Fraser, and S.E. Hasyko, “Optimization of Al step coverage through computer simulation and scanning electron microscopy,” Vac. Set Technol, vol. 15, pp. 13–19, 1978.
3. N.S. Viswanathan, “Simulation of plasma etched lithographic structures,”/ Vac. Set Technol, vol. 16, no. 2, pp. 388–390, Mar./Apr. 1979.
4. J.P. Ducommun, M. Cantagrel, and M. Moulin, “Evolution of well-defined surface contour submitted to ion bombardment: Computer simulation and experimental investigation,” /. Mater. Set, vol. 10, pp. 52–62, 1975.
5. H.W. Lehmann, L. Krausbauer, and R. Widmer, “Redeposition-A serious problem in rf sputter etching of structures with micrometer dimensions,” /. Vac. Set Technol, vol. 14, no. 1, pp. 281–284, Jan./Feb. 1977.
6. A.R. Neureuther, C.Y. Lin, andC.H. Ting, “Modeling ion milling,” /. Vac. Sci. Technol., vol. 16, no. 6, pp. 1767–1771, Nov./Dec. 1979.
7. C. Catana, J.S. Colligon, and G. Carter, “The equilibrium topography of sputtered amorphous solids-Part 3,” / Mater. Sci., pp. 467–471, 1972.
8. J.L. Reynolds, A.R. Neureuther, and W.G. Oldham, “Simulation of dry etched line edge profiles,” /. Vac. Sci. Technol, vol. 16, no. 6, pp. 1772–1775, Nov./Dec. 1979.
9. C.Y. Ting, V.J. Vivalda, and H.G. Schaefer, “Study of planarized sputter-deposited Si02,” /. Vac. Sci. Technol, vol. 15, pp. 1105–1112, May/June 1978.