The n-ZnO/n-In2O3 heterojunction formed by a surface-modification and their potential barrier-control in methanal gas sensing

Sensors and Actuators, B: Chemical

Volumn 222, Issue , 2016, Pages 508-516

  Ma, Longtao ^a   Fan, Huiqing ^a   Tian, Hailin ^a   Fang, Jiawen ^a   Qian, Xuezhu ^b  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b Shaanxi Electronic Information Group   (China)

Author keywords

Electron transfer modulation; HCHO detecting; Heterostructure; Sonochemical synthesis; ZnO modified In2O3

Indexed keywords

CHEMICAL DETECTION; ELECTRON TRANSITIONS; FORMALDEHYDE; GAS DETECTORS; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; NANOSTRUCTURES; SONOCHEMISTRY; SURFACE TREATMENT; ZINC OXIDE;

COST-EFFICIENT; DETECTION LIMITS; ELECTRON TRANSFER; GAS RESPONSE; GAS SENSING; HCHO DETECTING; POTENTIAL BARRIERS; SONOCHEMICAL SYNTHESIS;

INDIUM COMPOUNDS;

EID: 84941040704     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2015.08.085     Document Type: Article

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