Vertical and Lateral Copper Transport through Graphene Layers

ACS Nano

Volumn 9, Issue 8, 2015, Pages 8361-8367

  Li, Ling ^c   Chen, Xiangyu ^a   Wang, Ching Hua ^a   Cao, Ji ^a   Lee, Seunghyun ^a   Tang, Alvin ^a   Ahn, Chiyui ^a   Singha Roy, Susmit ^b   Arnold, Michael S ^b   Wong, H S Philip ^a  

^a Stanford University   (United States)

^b Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^c NONE

Author keywords

back end of the line (BEOL); Cu diffusion barrier; graphene; interconnect; modified E model; reliability; time dependent dielectric breakdown (TDDB)

Indexed keywords

DIELECTRIC MATERIALS; DIFFUSION; DIFFUSION BARRIERS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; GRAIN BOUNDARIES; RELIABILITY;

BACK END OF THE LINES; CU DIFFUSION BARRIER; E-MODEL; INTERCONNECT; TIME DEPENDENT DIELECTRIC BREAKDOWN;

GRAPHENE;

EID: 84940116788     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b03038     Document Type: Article

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