Piezotronic Effect in Polarity-Controlled GaN Nanowires

ACS Nano

Volumn 9, Issue 8, 2015, Pages 8578-8583

  Zhao, Zhenfu ^a   Pu, Xiong ^a   Han, Changbao ^a   Du, Chunhua ^a   Li, Linxuan ^a   Jiang, Chunyan ^a   Hu, Weiguo ^a   Wang, Zhong Lin ^a,b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b Georgia Institute of Technology   (United States)

Author keywords

GaN; piezotronic effect; polarity

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; ELECTRON TRANSPORT PROPERTIES; NANOWIRES; QUALITY CONTROL; SCHOTTKY BARRIER DIODES; ZINC SULFIDE;

COMPRESSIVE FORCES; ELECTRON TRANSPORT; GAN; PIEZOELECTRIC POLARIZATIONS; PIEZORESISTIVE EFFECTS; PIEZOTRONIC EFFECT; POLARITY; WURTZITE STRUCTURE;

GALLIUM NITRIDE;

EID: 84940093844     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b03737     Document Type: Article

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