Peculiarities of boron distribution in as-grown boron-doped diamond

Materials Research Express

Volumn 1, Issue 3, 2014, Pages

  Blank, V D ^a,b   Kulnitskiy, B A ^a,b   Perezhogin, I A ^a,b,c   Terentiev, S A ^a   Nosukhin, S A ^a   Kuznetsov, M S ^a  

^a TECHNOLOGICAL INSTITUTE FOR SUPERHARD AND NOVEL CARBON MATERIALS   (Russian Federation)

^b MOSCOW INSTITUTE OF PHYSICS AND TECHNOLOGY   (Russian Federation)

^c MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

Boron doped diamond; Crystal structure defects; Diffusion; Fluorescence imaging; Transmission electron microscopy

Indexed keywords

BOOLEAN FUNCTIONS; BORON; CRYSTAL LATTICES; DIAMONDS; DIFFUSION; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ENERGY DISSIPATION; FLUORESCENCE IMAGING; GRADIENT METHODS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

AS-GROWN; BORON DISTRIBUTION; BORON DOPED DIAMOND; DIAMOND LATTICES; EQUILATERAL TRIANGLES; HIGH ISOSTATIC PRESSURE; HIGH RESOLUTION IMAGE; STRUCTURAL PECULIARITIES;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 84939956999     PISSN: None     EISSN: 20531591     Source Type: Journal    
DOI: 10.1088/2053-1591/1/3/035905     Document Type: Article

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