Dramatic Enhancement in Photoresponse of β-In2S3 through Suppression of Dark Conductivity by Synthetic Control of Defect-Induced Carrier Compensation

ACS Applied Materials and Interfaces

Volumn 7, Issue 32, 2015, Pages 17671-17681

  Chaudhari, Nilima ^a   Mandal, Lily ^d   Game, Onkar ^d   Warule, Sambhaji ^b   Phase, Deodatta ^c   Jadkar, Sandesh ^a   Ogale, Satishchandra ^d  

^a UNIVERSITY OF PUNE   (India)

^b Modern Education Society's   (India)

^c UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH   (India)

^d NATIONAL CHEMICAL LABORATORY   (India)

Author keywords

defects; hydrothermal growth; octahedrons; photoluminescence; photoresponse; In2S3

Indexed keywords

DEFECTS; FLIP CHIP DEVICES; HYDROTHERMAL SYNTHESIS; NANOCOMPOSITES; OXIDE FILMS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM; SULFUR COMPOUNDS; TIN OXIDES;

CARRIER COMPENSATION; FLUORINE DOPED TIN OXIDE; GROWTH INTERRUPTION; HYDROTHERMAL GROWTH; HYDROTHERMAL METHODS; OCTAHEDRONS; OPTOELECTRONIC PROPERTIES; PHOTORESPONSES;

INDIUM SULFIDE;

EID: 84939865498     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b02885     Document Type: Article

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