Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

Journal of Applied Physics

Volumn 118, Issue 6, 2015, Pages

  Schaefer, Michael ^a   Schlaf, Rudy ^b  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

^b University of South Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTRONIC STRUCTURE; FILM THICKNESS; GROWTH RATE; OXIDE FILMS; PHOTOELECTRON SPECTROSCOPY; SPECTRUM ANALYSIS; SURFACE STRUCTURE; THIN FILMS;

AVERAGE GROWTH RATE; BAND ALIGNMENTS; GROWTH BEHAVIOR; INTERFACE DIPOLE; INTERFACIAL DIPOLE LAYERS; NANOELECTRONIC DEVICES; NON-STOICHIOMETRIC; X RAY PHOTOEMISSION SPECTROSCOPY;

RUTHENIUM COMPOUNDS;

EID: 84939170166     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4928462     Document Type: Article

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