Generation of interface states by ionizing radiation in very thin MOS oxides

IEEE Transactions on Nuclear Science

Volumn 33, Issue 6, 1986, Pages 1185-1190

  Saks, Nelson S ^a   Ancona, Mario G ^a   Modolo, John A ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939068629     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1986.4334576     Document Type: Article

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