Improved MESFET characterisation for analog circuit design and analysis

GaAs IC Symposium Technical Digest 1992

Volumn , Issue , 1992, Pages 225-228

  Parker, Anthony E ^a   Skellern, David J ^a  

^a MACQUARIE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG CIRCUITS; DRAIN CURRENT; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MESFET DEVICES; SEMICONDUCTING GALLIUM; TIMING CIRCUITS;

ANALOG CIRCUIT DESIGN; CONTINUOUSLY DIFFERENTIABLE; CURRENT BEHAVIORS; DESIGN AND ANALYSIS; EXTENDED RANGE; LARGE SIGNAL MODELING; OPERATING CONDITION; OPERATING REGIONS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 84939061258     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GAAS.1992.247262     Document Type: Conference Paper

References (12)

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10. A.E. Parker and D.J. Skellern, work to be published.
11. A.E. Parker and D.J. Skellern, "GaAs Device Modelling for Design and Applications", IEEE Int. Sym. on Circuits and Systems: Singapore, pp. 1837-1840: June 11-14, 1991.
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