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Volumn 33, Issue 6, 1986, Pages 1203-1209

Spatial dependence of trapped holes determined from tunneling analysis and measured annealing

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84939057367     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1986.4334579     Document Type: Article
Times cited : (68)

References (27)
  • 8
    • 84939062523 scopus 로고
    • A Model for the Discharge of Radiation-Induced Induced Space Charge in MOSFET's
    • R. J. Maier, “A Model for the Discharge of Radiation-Induced Induced Space Charge in MOSFET's”, AFWL-TR-74-266 (1975).
    • (1975) AFWL-TR-74-266
    • Maier, R.J.1
  • 10
    • 84939063084 scopus 로고
    • A Direct Tunneling Model of Charge Transfer at the Insulator-Semiconductor Interface in MIS Devices
    • Harry Diamond Laboratories
    • F. B. McLean, “A Direct Tunneling Model of Charge Transfer at the Insulator-Semiconductor Interface in MIS Devices,” Harry Diamond Laboratories, HDL-TR-1765 (1976).
    • (1976) HDL-TR-1765
    • McLean, F.B.1
  • 11
    • 0020918475 scopus 로고
    • J. F. Verweij and D. R. Wolters, editors, Elsevier Science Publishers B.V. (North Holland)
    • S. Manzini and A. Modelli, Insulating Films on Semiconductors, J. F. Verweij and D. R. Wolters, editors, Elsevier Science Publishers B.V. (North Holland), 1983, P. 112.
    • (1983) Insulating Films on Semiconductors , pp. 112
    • Manzini, S.1    Modelli, A.2
  • 21
    • 84939019759 scopus 로고    scopus 로고
    • to be published
    • A. H. Edwards, to be published.
    • Edwards, A.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.