Comparative study of gamma-ray-irradiation effects on n-type gaas and inp

IEEE Transactions on Nuclear Science

Volumn 34, Issue 6, 1987, Pages 1704-1708

  Kitagawa, Michiharu ^a   Nakamura, Koji ^b  

^a Osaka Prefecture University   (Japan)

^b UNIVERSITY OF MIYAZAKI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939056506     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1987.4337540     Document Type: Article

References (13)

1. M. Kitagawa, K. Morimoto, S. Yoshida, K. Mitsui and Y. Yukimoto, “Effects of 10-MeV-Proton Irradiation on Electrical Properties of GaAs,” Proc. 4th Symp. Accelerator Science and Technology, 1982, p 163.
2. K. Mitsui, S. Yoshida, T. Oda, Y. Yukimoto, M. Kitagawa, K. Morimoto and T. Fujino, “52-MeV-Proton Irradiation Effects on GaAs Solar Cells GaAs Crystalline Characteristics,” Annual Report, 1982 Institute for Nuclear Study, University of Tokyo p 45 (1982).
3. M. Kitagawa, K. Morimoto, T. Fujino and T. Yoshida, “Electron-Irradiation Effects on Electrical Properties of n-type GaAs,” Ann. Rep. Rad. Ctr. Osaka 22, 23(1981)
4. M. Kitagawa, K. Morimoto, S. Yoshida, K. Mitsui and Y. Yukimoto, “Effects of 10-MeV-Proton Irradiation on Electrical Resistivity of GaAs,” Ann. Rep. Rad. Ctr. Osaka 23, 27(1982).
5. M. Kitagawa, T. Fujino and K. Morimoto, “Carrier Removal Rates During Electron and Proton Irradiation in GaAs,” Ann. Rep. Rad. Ctr. Osaka 25, 29(1984)
6. M. Kitagawa, T. Fujino and K. Morimoto, “Radiation-Induced Compensation Effects in N-Type InP,” Ann. Rep. Rad. Ctr. Osaka 26, 75(1985)
7. M. Kitagawa, T. Fujino and K. Morimoto, “RadiationInduced Compensation Effects on Compound Semiconductors,” Proc. 3rd International Workshop on Future electron Devices and Radiation Hardened Semiconductor Devices, 1986, pp 89-92
8. N.F.Mott, “Metal-Insulator Transition,” p 124, Taylor and Francis, London (1974)
9. H.Fritzsche, “Resistivity and Hall Coefficient of Antimony Doped Germanium at low Temperatures,” J. Phys. Chem. Solids 6, 87(1958)
10. D.L.Rode, “Electron Nobility in Direct-Gap Polar Semiconductors,” Phys. Rev. B2, 1012(1970)
11. B.R. Nag “Electron Transport in Compound Semiconductors” (Springer-Verlag Berlin 1980)
12. K. Morimoto and M. Kitagawa, “Electrical Conduction in Undoped CdS at Low Temperatures,” J. Phys. Soc. Japan 54, 4271(1985)
13. ML Yamaguchi, Y.Itoh, K. Ando and A. Yamamoto, “Room Temperature Annealing Effects on Radiation-Induced Defects in InP Crystal and Solar Cells,” Jpn. J. Appl. Phys. Pt.1 25, 1650(1986)