Short-term charge annealing in electron-irradiated silicon dioxide

IEEE Transactions on Nuclear Science

Volumn 18, Issue 6, 1971, Pages 106-112

  Simons, M ^a   Hughes, H L ^b  

^a Research Triangle Institute Research ^*  (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939050366     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1971.4326420     Document Type: Article

References (9)

1. K.H. Zaininger and A.G. Holmes-Siedle; “Radiation Effects in MIS Devices,” RCA Review 28, pp. 208–240, June 1967.
2. E.H. Snow, A.S. Grove, D.J. Fitzgerald, “Effects of Ionizing Radiation on Oxidized Silicon Surfaces and Planar Devices,” Proc. IEEE 55, pp. 1168–1185, July 1967.
3. V. Danchenko, U.D. Desai, and S.S. Brashears, “Characteristics of Thermal Annealing of Radiation Damage in MOSFET’s,” J. Appl. Phys. 39, pp. 2417–2424, April 1968.
4. M. Simons, L.K. Monteith, and J.R. Hauser, “Some Observations on Charge Buildup and Release in Silicon Dioxide Irradiated With Low Energy Electrons,” IEEE Trans on Electron Devices ED-15, pp. 966–973, December 1968.
5. H.H. Sander and B.L. Gregory, “Transient Annealing in Semiconductor Devices Following Pulsed Neutron Irradiation,” IEEE Trans on Nuclear Science NS-13, (6), pp. 53–62, December 1966.
6. B. Andre, J. Buxo, D. Esteve, and H. Martinot, “Effects of Ionizing Radiation on MOS Devices,” Solid State Electronics 12, p. 124, 1969.
7. J.F. Fowler, “X-ray Induced Conductivity in Insulating Materials,” Proc. Roy. Soc. (London) A236, pp. 464–480, 1956.
8. L.K. Monteith and J.R. Hauser, “Space-Charge Effects in Insulators Resulting from Electron Irradiation,” J. Appl. Phys. 38, pp. 5355–5365, December 1967.
9. M. Simons and H.L. Hughes, “Rapid Annealing of Pulse-Radiation-Induced Space Charge in Silicon Dioxide,” J. Appl. Phys. 42, pp. 3000–3001, June 1971.