Single event upset rate estimates for a 16-k CMOS SRAM

IEEE Transactions on Nuclear Science

Volumn 32, Issue 6, 1985, Pages 4133-4139

  Koga, R ^b   Kolasinski, W A ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939035822     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1985.4334081     Document Type: Article

References (8)

1. S. E. Diehl, A. Ochoa, Jr., P. V. Dressendorfer, R. Koga, and W. A. Kolasinski, “Error Analysis and Prevention Prevention of Cosmic Ion-Induced Soft Errors in Static CMOS RAMs,” IEEE Trans. Nuc. Sci., Vol. NS- 29, pp. 2032–2039, December 1982.
2. T. M. Mnich, B. D. Shafer, and S. E. uiehl, “Comparison of Analytical Models and Experimental Results for Single Event Upset in CMOS SRAMS,” unpublished manuscript, 1984.
3. R. Koga and W. A. Kolasinski, “Heavy Ion-Induced Single Event Upsets of Microcircuits,” IEEE Trans. Nuc. Sci., Vol NS. 31, pp. 1190–1195, December 1984.
4. P. Shapiro, “Calculation of Cosmic Ray Induced Single Event Upsets,” NRL Memorandum Report 5171, Naval Research Laboratory, Washington, D.C., September 1983.
5. P. Shapiro, E. L. Petersen, and J. H. Adams, Jr., “Calculation of Cosmic-Ray Induced Soft Upsets and Scaling in VLSI Devices,” NRL Memorandum Report 4864, Naval Research Laboratory, Washington, D.C., August 1982.
6. F. B. McLean and T. R. Oldham, “Change Funneling in N-and P-Type Si Substrates,” IEEE Trans. Nuc. Sci., Vol NS-29, pp. 2018–2023, December 1982.
7. Z. Kohavi, Switchini and Finite Automata Theory, 2nd ed., McGraw-Hill Book Company, 1978, pp. 15–20, 253–263. 263.
8. C. N. Dorny, K. A. Fegley, and E. S. Krendel, “Section 5, Systems Engineering,” pp. 5–15, in D. G. Fink, ed., Electronics Engineers' Handbook, McGraw-Hill Book Company, 1975.