Ionizing radiation effects in n-channel (Hg, Cd)te misfets with anodio sulfide passivation

IEEE Transactions on Nuclear Science

Volumn 34, Issue 6, 1987, Pages 1597-1601

  Waterman, James R ^a   Schiebel, R A ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939035546     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1987.4337522     Document Type: Article

References (22)

1. F. A. Junga, W. W. Anderson, and R. B. Emmons, “Effects of Gamma Irradiation on Surface properties of HgCdTe Photoconductors,” IEEE Trans. Nuc. Sci., NS-25(6), pp. 1274–1282 (1980).
2. A. H. Kalma and R. A. Cesena, “Radiation Testing of Trimetal Infrared Detectors,” IEEE Trans. Nuc. Sci., NS-26, pp. 4833–4839 (1979).
3. D. W. Domkowski, D. G. Feller, L. R. Johnson, C. I. Westmark, C. B. Norris, C. T. Fuller, and J. Bajaj, “Effects of 6 MeV Electron Irradiation on the Electrical Characteristics of LPE Hg(.7)Cd(.3)Te/CdTe Mesa Photodiodes,” diodes,” IEEE Trans. Nuc. Sci., NS-33 (6), pp. 1471–1473 (1986).
4. J. R. Waterman and J. M. Killiany, “2 MeV Electron Irradiation in (Hg, Cd)Te CCDs,” IEEE Trans. Nuc. Sci., NS-30(6), pp. 4209–4215 (1983).
5. A. H. Kalma and M. A. Hopkins, “Ionizing Radiation Effects in (Hg, Cd)Te MIS Capacitors,” IEEE Trans. Nuc. Sci., NS-28 (6), pp. 4083–4087 (1981).
6. A.H. Kalma, R.A. Hartman, and B.K. Janousek, “Ionizing Radiation Effects in HgCdTe MIS Capacitors Containing a Photochemically-Deposited SiO2 Layer,” IEEE Trans. Nuc. Sci., NS-30 (6), pp. 4146–4150 (1983).
7. For a brief review of the subject refer to Chapter 11 in “MOS Physics and Technology,” E.H. Nicollian and J.R. Brews, John Wiley and Sons, (1982).
8. Y. Nemirovsky, L. Burstein, and I. Kidron, “Inter-face of p-Type HgCdTe Passivated With Native Sulfides,” J. Appl. Phys. 58(1), pp. 366373 (1985).
9. P. Richman, “MOS Field-Effect Transistors and Integrated Circuits”, p. 86, John Wiley and Sons, New York, 1973.
10. P. Richman, “MOS Field-Effect Transistors and Integrated Circuits”, p. 78, John Wiley and Sons, New York, 1973.
11. S.M. Sze, “Physics of Semiconductor Devices,” p. 447, John Wiley and Sons, New York, 1981.
12. A pair creation energy of 11 eV is assumed, this is approximately three times the ZnS bandgap of 3.6 eV.
13. O. L. Curtis, J. R. Srour, and K. Y. Chiu, J. Appl. Phys., 45, p. 4506, (1974).
14. Private communication A. Simmons, Texas Instruments Central Research Laboratory
15. H.E. Boesch Jr. and T.L. Taylor, “Charge and Interface State Generation in Field Oxides,” IEEE Trans. Nuc. Sci., NS-31 (6), pp. 1273–1279, (1984).
16. R. C. Hughes, Phys. Rev. Lett, 30, p. 1333, (1973).
17. M. Aven and C. A. Mead, Appl. Phys. Lett. 7, p. 8, (1965).
18. M. Aven, Ext. Abstr. Meet. Electrochem. Soc., 11, p. 46, (1962).
19. R. S. Cobbold, “Theory and Application of Field Effect Transistors”, New york: Wiley, 1970, pp. 225–227.
20. G. A. Antcliffe, R. T. Bate, and R. A. Reynolds, “The Physics of Semimetals and Narrow Gap Semiconductors,” (Edited by Carter and Bate) p. 499, Pergaeon Press, Oxford, 1971.
21. J. L. Rutledge and W. E. Armstrong, “Effective Surface Mobility Theory,” Sol. Stat. Elec., 15, pp. 215–219 (1972).
22. E.T. Gaw and W.G. Oldham, “Properties of Heavily Irradiated MOSFETs,” IEEE Trans. Nuc. Sci. NS-21(6), pp. 124–129 (1974).