First tests with fully depleted pn-CCD‘s

IEEE Transactions on Nuclear Science

Volumn 35, Issue 1, 1988, Pages 372-376

  Strder, L ^a   Lutz, G ^a   Sterzik, M ^a   Holl, P ^b   Kemmer, J ^b   Prechtel, U ^b   Ziemann, T ^b   Rehak, P ^c  

^a Werner Heisenberg Institut für Physik   (Germany)

^b AIRBUS GROUP INNOVATIONS   (Germany)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RADIATION DETECTORS; RADIOGRAPHY - X-RAY; SEMICONDUCTOR DEVICES, CHARGE TRANSFER;

ENERGY-/POSITION-SENSITIVE RADIATION DETECTORS; FULLY DEPLETED PN-CCD'S; IONIZING PARTICLES; SEMICONDUCTOR DRIFT-CHAMBER PRINCIPLE;

SEMICONDUCTOR DEVICES, CHARGE COUPLED;

EID: 84939006046     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.12746     Document Type: Article

References (4)

1. E. Gatti, P. Rehak: Semiconductor Drift Chamber - an Application of a Novel Charge Transport Scheme, in Proc. 2nd Pisa Meeting on Advanced Detectors, Grosetto, Italy(1983) NIM A, Vol. 225 (1984) pp.608-614.
2. Barlag, S. et al, Measurement of the Lifetime of the Charmed Baryon A c, CERN-EP/86-173, submitted to Physics Letters B
3. Development of Fully Depletable CCD's for High Energy Physics Applications, NIM A, Vol. 257 (1987), pp. 594–602.
4. Design of Charge Preamplifiers on High Resistivity Detector Grade Silicon, Radeka, V. et al, contribution to the IEEE 1987 Nuclear Science Symposium, to be published in the conference proceedings