Circuit-level benchmarking of access devices for resistive nonvolatile memory arrays

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2015-February, Issue February, 2015, Pages 29.7.1-29.7.4

  Narayanan, P ^a   Burr, G W ^a   Shenoy, R S ^a   Virwani, K ^a   Kurdi, B ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

1AD1R; Access Device; Nonvolatile memory; Selector

Indexed keywords

ELECTRON DEVICES; TIMING CIRCUITS;

1AD1R; ACCESS DEVICES; CIRCUIT LEVELS; CIRCUIT PARAMETER; INTRINSIC PROPERTY; NON-VOLATILE MEMORY; SELECTOR; SWITCHING VOLTAGES;

NONVOLATILE STORAGE;

EID: 84938281754     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2014.7047137     Document Type: Conference Paper

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