Broadband 10Gb/s graphene electro-absorption modulator on silicon for chip-level optical interconnects

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2015-February, Issue February, 2015, Pages 5.6.1-5.6.4

  Hu, Y T ^b   Pantouvaki, M ^a   Brems, S ^a   Asselberghs, I ^a   Huyghebaert, C ^a   Geisler, M ^b   Alessandri, C ^a   Baets, R ^b   Absil, P ^a   Van Thourhout, D ^b   Van Campenhout, J ^a  

^a IMEC   (Belgium)

^b GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; GRAPHENE; INTEGRATED CIRCUIT INTERCONNECTS; OPTICAL INTERCONNECTS; OPTICAL SIGNAL PROCESSING; SILICON;

10 GB/ S; CHIP-LEVEL; LOW INSERTION LOSS; LOW-DRIVE VOLTAGES; MODULATION SPEED; OPTICAL INTERCONNECT; SI DEVICES;

LIGHT MODULATORS;

EID: 84938259637     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2014.7046991     Document Type: Conference Paper

References (9)

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