An isotropic best-fitting band model for electron and hole transport in silicon

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 503-506

  Venturi, F ^b   Abramo, A ^a   Sangiorgi, E ^a   Higman, J M ^c   Fiegna, C ^a   Ricco, B ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Anisotropic magnetoresistance; Bars; Boltzmann equation; Charge carrier processes; Computational modeling; Information technology; Microscopy; Monte Carlo methods; Scattering; Silicon

Indexed keywords

ANISOTROPY; BAND STRUCTURE; BARS (METAL); BOLTZMANN EQUATION; ELECTRON DEVICES; ENHANCED MAGNETORESISTANCE; INFORMATION TECHNOLOGY; MICROSCOPIC EXAMINATION; SCATTERING; SILICON;

ANISOTROPIC BAND STRUCTURE; BOLTZMANN TRANSPORT EQUATION; CHARGE CARRIER PROCESS; COMPUTATIONAL MODEL; DEVICE SIMULATORS; GROUP VELOCITIES; NON-HOMOGENEOUS TERMS; SILICON BAND STRUCTURE;

MONTE CARLO METHODS;

EID: 84938004502     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235346     Document Type: Conference Paper

References (0)