Cosmic-ray-induced errors in mos devices*

IEEE Transactions on Nuclear Science

Volumn 27, Issue 2, 1980, Pages 1006-1015

  Pickel, James C ^a   Blandford, James T ^a  

^a Rockwell International   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84937995134     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1980.4330967     Document Type: Article

References (10)

1. J. T. Wallmark and S. M. Marcus, Proceedings of the IRE, March 1962, pp. 286–298.
2. D. Binder, E. C. Smith, and A. B. Holman, IEEE Trans. Nucl. Sci., NS-22, No. 6, December 1975, pp. 2675–2680.
3. J. C. Pickel and J. T. Blandford, Jr., IEEE Trans. Nucl. Sci., NS-25, No. 6, December 1978, pp. 1166–1171.
4. W. A. Kolasinski, J. B. Blake, J. K. Anthony, W. E. Price, and E. C. Smith, “Simulation of Cosmic-Ray Induced Soft Errors and Latchup in Integrated-Circuit Computer Memories,” 1979 IEEE Nuclear and Space Radiation Effects Conference.
5. L. L. Sivo, M. Brettschneider, W. Price, and P. Pentecost, “Cosmic Ray Induced Soft Errors in Static MOS Memory Cells,” 1979 IEEE Nuclear and Space Radiation Effects Conference.
6. W. Heinrich, Radiation Effects, 1977, 34, pp. 143–148.
7. S. B. Curtis and M. C. Wilkinson, NASA TM X-2440, January 1972, pp. 1007–1014.
8. L. C. Northcliffe and R. F. Schilling, Nuclear Data A7 Academic Press, 1970.
9. SYSCAP II, System of Circuit Analysis Programs, User Information Manual Publication 76070600C, Control Data Corporation, April 1978.
10. Private Communication with E. C. Smith, Hughes Aircraft Company.