Low Temperature ABC-Type Ru Atomic Layer Deposition through Consecutive Dissociative Chemisorption, Combustion, and Reduction Steps

Chemistry of Materials

Volumn 27, Issue 14, 2015, Pages 4950-4956

  Lu, Junling ^a   Elam, Jeffrey W ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMISORPTION; COMBUSTION; CRYSTAL IMPURITIES; DEPOSITION; DISSOCIATION; IN SITU COMBUSTION; MASS SPECTROMETRY; MOLECULAR OXYGEN; NONMETALS; OXYGEN; PRECIOUS METALS; QUARTZ CRYSTAL MICROBALANCES; RUTHENIUM; TEMPERATURE;

COMBUSTION TYPES; DEPOSITION TEMPERATURES; DISSOCIATIVE CHEMISORPTION; HIGH TEMPERATURE; LOW TEMPERATURES; OXYGEN IMPURITY; QUADRUPOLE MASS SPECTROSCOPIES; SITU QUARTZ CRYSTAL MICROBALANCE;

ATOMIC LAYER DEPOSITION;

EID: 84937964883     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/acs.chemmater.5b00818     Document Type: Article

References (40)

1. Wen, H.-C.; Lysaght, P.; Alshareef, H. N.; Huffman, C.; Harris, H. R.; Choi, K.; Senzaki, Y.; Luan, H.; Majhi, P.; Lee, B. H.; Campin, M. J.; Foran, B.; Lian, G. D.; Kwong, D. L. Thermal response of Ru electrodes in contact with SiO2 and Hf-based high-k gate dielectrics J. Appl. Phys. 2005, 98, 043520 10.1063/1.2012510
2. Kittl, J. A.; Opsomer, K.; Popovici, M.; Menou, N.; Kaczer, B.; Wang, X. P.; Adelmann, C.; Pawlak, M. A.; Tomida, K.; Rothschild, A.; Govoreanu, B.; Degraeve, R.; Schaekers, M.; Zahid, M.; Delabie, A.; Meersschaut, J.; Polspoel, W.; Clima, S.; Pourtois, G.; Knaepen, W.; Detavernier, C.; Afanas'ev, V. V.; Blomberg, T.; Pierreux, D.; Swerts, J.; Fischer, P.; Maes, J. W.; Manger, D.; Vandervorst, W.; Conard, T.; Franquet, A.; Favia, P.; Bender, H.; Brijs, B.; Van Elshocht, S.; Jurczak, M.; Van Houdt, J.; Wouters, D. J. High-k dielectrics for future generation memory devices (Invited Paper) Microelectron. Eng. 2009, 86, 1789 10.1016/j.mee.2009.03.045
3. Bandaru, J.; Sands, T.; Tsakalakos, L. Simple Ru electrode scheme for ferroelectric (Pb,La)(Zr,Ti)O-3 capacitors directly on silicon J. Appl. Phys. 1998, 84, 1121 10.1063/1.368112
4. Josell, D.; Wheeler, D.; Witt, C.; Moffat, T. P. Seedless superfill: Copper electrodeposition in trenches with ruthenium barriers Electrochem. Solid-State Lett. 2003, 6, C143 10.1149/1.1605271
5. Kawano, K.; Kosuge, H.; Oshima, N.; Funakubo, H. Conformability of ruthenium dioxide films prepared on substrates with capacitor holes by MOCVD and modification by annealing Electrochem. Solid-State Lett. 2006, 9, C175 10.1149/1.2336992
6. Kil, D. S.; Lee, J. M.; Roh, J. S. Low-temperature ALD growth of SrTiO3 thin films from Sr beta-diketonates and Ti alkoxide precursors using oxygen remote plasma as an oxidation source Chem. Vap. Deposition 2002, 8, 195 10.1002/1521-3862(20020903)8:5<195::AID-CVDE195>3.0.CO;2-9
7. Vehkamaki, M.; Hatanpaa, T.; Hanninen, T.; Ritala, M.; Leskela, M. Growth of SrTiO3 and BaTiO3 thin films by atomic layer deposition Electrochem. Solid-State Lett. 1999, 2, 504 10.1149/1.1390884
8. Sandhage, K. H.; Allan, S. M.; Dickerson, M. B.; Gaddis, C. S.; Shian, S.; Weatherspoon, M. R.; Cai, Y.; Ahmad, G.; Haluska, M. S.; Snyder, R. L.; Unocic, R. R.; Zalar, F. M.; Zhang, Y. S.; Rapp, R. A.; Hildebrand, M.; Palenik, B. P. Merging biological self-assembly with synthetic chemical tailoring: The potential for 3-D genetically engineered micro/nano-devices (3-D GEMS) Int. J. Appl. Ceram. Technol. 2005, 2, 317 10.1111/j.1744-7402.2005.02035.x
9. Kim, S. K.; Lee, S. W.; Han, J. H.; Lee, B.; Han, S.; Hwang, C. S. Capacitors with an Equivalent Oxide Thickness of < 0.5 nm for Nanoscale Electronic Semiconductor Memory Adv. Funct. Mater. 2010, 20, 2989 10.1002/adfm.201000599
10. Suntola, T.; Hyvarinen, J. Atomic layer epitaxy Annu. Rev. Mater. Sci. 1985, 15, 177 10.1146/annurev.ms.15.080185.001141
11. Knez, M.; Nielsch, K.; Niinisto, L. Synthesis and surface engineering of complex nanostructures by atomic layer deposition Adv. Mater. 2007, 19, 3425 10.1002/adma.200700079
12. Leskela, M.; Ritala, M. Atomic layer deposition chemistry: Recent developments and future challenges Angew. Chem., Int. Ed. 2003, 42, 5548 10.1002/anie.200301652
13. Aaltonen, T.; Rahtu, A.; Ritala, M.; Leskela, M. Reaction mechanism studies on atomic layer deposition of ruthenium and platinum Electrochem. Solid-State Lett. 2003, 6, C130 10.1149/1.1595312
14. Aaltonen, T.; Alen, P.; Ritala, M.; Leskela, M. Ruthenium thin films grown by atomic layer deposition Chem. Vap. Deposition 2003, 9, 45 10.1002/cvde.200290007
15. Kwon, O. K.; Kim, J. H.; Park, H. S.; Kang, S. W. Atomic layer deposition of ruthenium thin films for copper glue layer J. Electrochem. Soc. 2004, 151, G109 10.1149/1.1640633
16. Lee, D. J.; Yim, S. S.; Kim, K. S.; Kim, S. H.; Kim, K. B. Formation of ru nanotubes by atomic layer deposition onto an anodized aluminum oxide template Electrochem. Solid-State Lett. 2008, 11, K61 10.1149/1.2901542
17. Kim, J. Y.; Kil, D. S.; Kim, J. H.; Kwon, S. H.; Ahn, J. H.; Roh, J. S.; Park, S. K. Ru Films from Bis(ethylcyclopentadienyl)ruthenium Using Ozone as a Reactant by Atomic Layer Deposition for Capacitor Electrodes J. Electrochem. Soc. 2012, 159, H560 10.1149/2.069206jes
18. Kwon, S. H.; Kwon, O. K.; Kim, J. H.; Jeong, S. J.; Kim, S. W.; Kang, S. W. Improvement of the morphological stability by stacking RuO2 on ru thin films with atomic layer deposition J. Electrochem. Soc. 2007, 154, H773 10.1149/1.2750448
19. Kukli, K.; Aarik, J.; Aidla, A.; Uustare, T.; Jogi, I.; Lu, J.; Tallarida, M.; Kemell, M.; Kiisler, A. A.; Ritala, M.; Leskela, M. Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1 '-methyl-ruthenocene J. Cryst. Growth 2010, 312, 2025 10.1016/j.jcrysgro.2010.03.033
20. Kukli, K.; Ritala, M.; Kemell, M.; Leskela, M. High Temperature Atomic Layer Deposition of Ruthenium from N,N-Dimethyl-1-ruthenocenylethylamine J. Electrochem. Soc. 2010, 157, D35 10.1149/1.3251285
21. Park, J. Y.; Yeo, S.; Cheon, T.; Kim, S. H.; Kim, M. K.; Kim, H.; Hong, T. E.; Lee, D. J. Growth of highly conformal ruthenium-oxide thin films with enhanced nucleation by atomic layer deposition J. Alloys Compd. 2014, 610, 529 10.1016/j.jallcom.2014.04.186
22. Knapas, K.; Ritala, M. In situ Reaction Mechanism Studies on Atomic Layer Deposition of Ir and IrO2 from Ir(acac)(3) Chem. Mater. 2011, 23, 2766 10.1021/cm103490v
23. Kessels, W. M. M.; Knoops, H. C. M.; Dielissen, S. A. F.; Mackus, A. J. M.; van de Sanden, M. C. M. Surface reactions during atomic layer deposition of Pt derived from gas phase infrared spectroscopy Appl. Phys. Lett. 2009, 95, 013114 10.1063/1.3176946
24. Mackus, A. J. M.; Leick, N.; Baker, L.; Kessels, W. M. M. Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum Chem. Mater. 2012, 24, 1752 10.1021/cm203812v
25. Hämäläinen, J.; Ritala, M.; Leskela, M. Atomic Layer Deposition of Noble Metals and Their Oxides Chem. Mater. 2014, 26, 786 10.1021/cm402221y
26. Leick, N.; Agarwal, S.; Mackus, A. J. M.; Kessels, W. M. M. Dehydrogenation Reactions during Atomic Layer Deposition of Ru Using O-2 Chem. Mater. 2012, 24, 3696 10.1021/cm301115s
27. Eom, T. K.; Sari, W.; Choi, K. J.; Shin, W. C.; Kim, J. H.; Lee, D. J.; Kim, K. B.; Sohn, H.; Kim, S. H. Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O-2 Electrochem. Solid-State Lett. 2009, 12, D85 10.1149/1.3207867
28. Aaltonen, T.; Ritala, M.; Tung, Y. L.; Chi, Y.; Arstila, K.; Meinander, K.; Leskela, M. Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature J. Mater. Res. 2004, 19, 3353 10.1557/JMR.2004.0426
29. Kim, W. H.; Park, S. J.; Kim, D. Y.; Kim, H. Atomic layer deposition of ruthenium and ruthenium-oxide thin films by using a Ru(EtCp)(2) precursor and oxygen gas J. Korean Phys. Soc. 2009, 55, 32 10.3938/jkps.55.32
30. Hämäläinen, J.; Puukilainen, E.; Kemell, M.; Costelle, L.; Ritala, M.; Leskela, M. Atomic Layer Deposition of Iridium Thin Films by Consecutive Oxidation and Reduction Steps Chem. Mater. 2009, 21, 4868 10.1021/cm901687w
31. Hämäläinen, J.; Puukilainen, E.; Sajavaara, T.; Ritala, M.; Leskela, M. Low temperature atomic layer deposition of noble metals using ozone and molecular hydrogen as reactants Thin Solid Films 2013, 531, 243 10.1016/j.tsf.2013.01.091
32. Hämäläinen, J.; Hatanpaa, T.; Puukilainen, E.; Sajavaara, T.; Ritala, M.; Leskela, M. Iridium metal and iridium oxide thin films grown by atomic layer deposition at low temperatures J. Mater. Chem. 2011, 21, 16488 10.1039/c1jm12245b
33. Knoops, H. C. M.; Elam, J. W.; Libera, J. A.; Kessels, W. M. M. Surface Loss in Ozone-Based Atomic Layer Deposition Processes Chem. Mater. 2011, 23, 2381 10.1021/cm2001144
34. Elam, J. W.; Groner, M. D.; George, S. M. Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition Rev. Sci. Instrum. 2002, 73, 2981 10.1063/1.1490410
35. Lu, J.; Low, K. B.; Lei, Y.; Libera, J. A.; Nicholls, A.; Stair, P. C.; Elam, J. W. Toward atomically-precise synthesis of supported bimetallic nanoparticles using atomic layer deposition Nat. Commun. 2014, 5, 3264 10.1038/ncomms4264
36. Lu, J.; Liu, B.; Greeley, J. P.; Feng, Z. X.; Libera, J. A.; Lei, Y.; Bedzyk, M. J.; Stair, P. C.; Elam, J. W. Porous Alumina Protective Coatings on Palladium Nanoparticles by Self-Poisoned Atomic Layer Deposition Chem. Mater. 2012, 24, 2047 10.1021/cm300203s
37. Lu, J.; Bin, L.; Guisinger, N. P.; Stair, P. C.; Greeley, J. P.; Elam, J. W. First-Principles Predictions and in Situ Experimental Validation of Alumina Atomic Layer Deposition on Metal Surfaces Chem. Mater. 2014, 26, 6752 10.1021/cm503178j
38. Ma, Q.; Guo, H. S.; Gordon, R. G.; Zaera, F. Uptake of Copper Acetamidinate ALD Precursors on Nickel Surfaces Chem. Mater. 2010, 22, 352 10.1021/cm9027447
39. Braun, K. F.; Iancu, V.; Pertaya, N.; Rieder, K. H.; Hla, S. W. Decompositional incommensurate growth of ferrocene molecules on a Au(111) surface Phys. Rev. Lett. 2006, 96, 246102 10.1103/PhysRevLett.96.246102
40. Braun, K. F.; Iancu, V.; Pertaya, N.; Rieder, K. H.; Hla, S. W. Decompositional incommensurate growth of ferrocene molecules on a Au(111) surface Phys. Rev. Lett. 2006, 96, 246102 10.1103/PhysRevLett.96.246102