Low Leakage Current ZnO Nanowire Schottky Photodiodes Built by Dielectrophoretic Contact

IEEE Electron Device Letters

Volumn 36, Issue 8, 2015, Pages 814-816

  Pau, Jose Luis ^a   Waters, Joseph ^b   Rivera, Elmer ^b   Kim, Seongsin M ^b   Kung, Patrick ^b  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b University of Alabama   (United States)

Author keywords

Dielectrophoresis; nanowires; Schottky photodiodes; ultraviolet photodetectors; ZnO

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC DEVICES; ELECTRIC RESISTANCE; ELECTRODES; ELECTROPHORESIS; ION BEAM ASSISTED DEPOSITION; ION BEAMS; NANOWIRES; PHOTODIODES; ZINC OXIDE;

BARRIER HEIGHT LOWERING; COUNTER ELECTRODES; LOW-LEAKAGE CURRENT; PHOTOGENERATED HOLES; RECTIFYING PROPERTIES; SCHOTTKY PHOTODIODES; ULTRA-VIOLET PHOTODETECTORS; ZNO;

LEAKAGE CURRENTS;

EID: 84937921034     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2015.2442678     Document Type: Article

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