Flip-Chip Interconnection Lumped-Electrode EADFB Laser for 100-Gb/s/λ Transmitter

IEEE Photonics Technology Letters

Volumn 27, Issue 16, 2015, Pages 1699-1701

  Kanazawa, Shigeru ^a   Fujisawa, Takeshi ^b,c   Takahata, Kiyoto ^a   Ito, Toshio ^a   Ueda, Yuta ^a   Kobayashi, Wataru ^d   Ishii, Hiroyuki ^d   Sanjoh, Hiroaki ^a  

^a NTT Device Innovation Center   (Japan)

^b NTT CORPORATION   (Japan)

^c HOKKAIDO UNIVERSITY   (Japan)

^d NTT Basic Research Laboratories   (Japan)

Author keywords

100 Gb s; Distributed feedback (DFB) laser; EADFB laser; electroabsorption modulator (EAM); Ethernet; flip chip interconnection; InGaAlAs

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; ELECTROABSORPTION MODULATORS; ELECTRODES; ETHERNET; FLIP CHIP DEVICES; FREQUENCY RESPONSE; LIGHT ABSORPTION; MODULATION; MODULATORS; OPTICAL TRANSMITTERS; SINGLE MODE FIBERS;

100 GB/S; EYE OPENINGS; FLIP-CHIP INTERCONNECTION; FREQUENCY RESPONSE CHARACTERISTIC; INGAALAS; MODULATION BANDWIDTH; NON-RETURN TO ZEROS;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84937116556     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2015.2438076     Document Type: Article

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