A 6-b, 4 GSa/s GaAs HBT ADC

IEEE Journal of Solid-State Circuits

Volumn 30, Issue 10, 1995, Pages 1109-1118

  Knudsen, Knud L ^a   Poulton, Ken ^a   Corcoran, John J ^a   Wang, Keh Chung ^b   Nubling, Randy B ^b   Pierson, Richard L ^b   Chang, Mau Chung F ^b   Asbeck, Peter M ^b,c   Huang, R T ^d  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b ROCKWELL SCIENCE CENTER   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d Rockwell Microelectronics Technology Center ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84937077467     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.466071     Document Type: Article

References (8)

1. F. Oehler et al., “A 3.6 GS/s 5 bit ADC using 0.3 μm AIGaAs HEMT technology,” in Tech. Dig., 1993 GaAs ICi Symp., pp. 163–166.
2. L. Tran et al., “Fully functional 4-bit A/D converters using InAlAs/InGaAs HBT's,” in Tech. Dig., 1993 GaAs IC Symposium, pp. 159–162.
3. R. B. Nubling, J. Yu, K. C. Wang, P. M. Asbeck, N. H. Sheng, M. F. Chang, Chen, R. L. Pierson, G. J. Sullivan, M. A. McDonald, A. J. Price, and D. M. Chen, “High speed 8:1 multiplexer and 1:8 demultiplexer implemented with AlGaAs/GaAs HBT's,” in Tech. Dig. 1990 GaAs IC Symp., pp. 53–56.
4. J. J. Corcoran and K. L. Knudsen, “A 400 MHz 6b ADC,” in ISSCC Dig. Tech. Papers, Feb. 1984, pp. 294–295.
5. K. L. Knudsen and J. J. Corcoran, “Packaging problems for high speed instrument applications,” Packaging Strategic Research Plan Workshop, Semiconductor Research Corporation, private communication, Jan. 1992.
6. B. Peetz, “Dynamic testing of waveform recorders,” IEEE Trans. Instrum. Meas., vol. IM-32, no. 1, pp. 12–17, Mar. 1983.
7. K. Poulton, K. L. Knudsen, J. J. Corcoran, K. C. Wang, R. Pierson, R. Nubling and M. C. F. Chang, “Thermal design and simulation of bipolar integrated circuits,” IEEE J. Solid-State Circuits, vol. 27, pp. 1379–1387, Oct. 1992.
8. D. Smith, A. Fraser, and J. O'Neil, “Measurement and prediction of operating temperatures for GaAs IC's,” in IEEE SEMITHERM 86 Proc., 1986, paper A.5, pp. 1–20.