0.1 μm CMOS and beyond

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1993, Pages 1-5

  Taur, Yuan ^a   Mii, Yuh Jier ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; MOSFET DEVICES; SI-GE ALLOYS; TEMPERATURE; THRESHOLD VOLTAGE; VLSI CIRCUITS;

DOUBLE-GATE DEVICE; LOW TEMPERATURE CMOS; PERFORMANCE ENHANCEMENTS; SERIES RESISTANCES; SOURCE-DRAIN EXTENSIONS; TEMPERATURE LEVEL; TEMPERATURE SCALING; VOLTAGE REQUIREMENT;

CMOS INTEGRATED CIRCUITS;

EID: 84936896260     PISSN: 19308868     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.1993.263615     Document Type: Conference Paper

References (23)

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