Preparation and measurement of highly efficient a-Si:H single junction solar cells and the advantages of μc-SiOx:H n-layers

Progress in Photovoltaics: Research and Applications

Volumn 23, Issue 8, 2015, Pages 939-948

  Lambertz, Andreas ^a   Finger, Friedhelm ^a   Schropp, Ruud E I ^b   Rau, Uwe ^a   Smirnov, Vladimir ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

a Si:H solar cells; degradation; measurement procedure; microcrystalline silicon oxide; stabilized efficiency; thin film silicon solar cells

Indexed keywords

AMORPHOUS SILICON; DEGRADATION; EFFICIENCY; LIGHT ABSORPTION; MICROCRYSTALLINE SILICON; REFRACTIVE INDEX; SILICON COMPOUNDS; SILICON OXIDES; SOLAR ABSORBERS; SOLAR CELLS; SOLAR POWER GENERATION; THIN FILM SOLAR CELLS;

A-SI:H SOLAR CELLS; AMORPHOUS SILICON (A-SI:H); DOPED MICROCRYSTALLINE SILICONS; MEASUREMENT PROCEDURES; PHOTOVOLTAIC APPLICATIONS; SINGLE JUNCTION SOLAR CELLS; STABILIZED EFFICIENCY; THIN-FILM SILICON SOLAR CELLS;

SILICON SOLAR CELLS;

EID: 84936890292     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2629     Document Type: Article

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