VA-3 MOS Characterization of Thermally Oxided 6H Silicon Carbide

IEEE Transactions on Electron Devices

Volumn 40, Issue 11, 1993, Pages 2130-2131

  Sanders, J W ^a   Pan, J ^a   Xie, W ^a   Sheppard, S T ^a   Mathur, M ^a   Cooper, J A ^a   Melloch, M R ^a  

^a PURDUE UNIVERSITY   (United States)

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EID: 84936484541     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.239812     Document Type: Article

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